3N140 Datasheet | Unknown Manufacturer

1403N (SILICON) N-CHANNEL DUAL-GATE SILICON-NITRIDE PASSIVATED MOS FIELD-EFFECT TRANSISTOR Depletion mode (Type B) dual-gate transistor designed for VHF amplifier and mixer applications_ N-CHANNEL DUAL-GATE MOS FIELD-EFFECT TRANSISTOR Type B - Silicon-Nitride Passivation for Excellent Long Term Stability - High mon-Source Power Gain - Gps = 16 d B (Min) @f =200 MHz - Low Reverse Transfer Capacitance - Crss =0.02 p F (Typ) @ VOS = 13 Vdc MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate I Voltage Drain-Gate 2 Voltage Reverse Gate I-Source Voltage Reverse Gate 2-Source Voltage Forward Gate I-Source Voltage Forward Gate 2-Source Voltage Drain Current Totai Device .Dissipation @TA = 25° C Derate above 25- C Operating and Storage Junction Temperature Range Symbol vos VDGI VDG2 VGS1(r) VGS2 (r) VGS1(f) VGS2(f) ~ TJ,Tstg Value o to +20 Unit Vdc 20 Vdc 20 Vdc -8.0 Vdc B.Oto 0.4 VDB Vdc +1.0 Vdc 0.4 VDS 50 Vdc m Adc 400 2.67 m W m Wr C -65 to...