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1403N (SILICON)
N-CHANNEL DUAL-GATE SILICON-NITRIDE PASSIVATED MOS FIELD-EFFECT TRANSISTOR
Depletion mode (Type B) dual-gate transistor designed for VHF amplifier and mixer applications_
N-CHANNEL
DUAL-GATE MOS FIELD-EFFECT
TRANSISTOR
TypeB
• Silicon-Nitride Passivation for Excellent Long Term Stability
• High Common-Source Power Gain -
Gps = 16 dB (Min) @f =200 MHz
• Low Reverse Transfer Capacitance -
Crss =0.02 pF (Typ) @ VOS = 13 Vdc
U
MAXIMUM RATINGS Rating
Drain-Source Voltage Drain-Gate I Voltage
Drain-Gate 2 Voltage
Reverse Gate I-Source Voltage
Reverse Gate 2-Source Voltage
Forward Gate I-Source Voltage Forward Gate 2-Source Voltage Drain Current Totai Device .