3N169
3N169 is MOS FIELD-EFFECT TRANSISTORS manufactured by Unknown Manufacturer.
3N169 (SILICON) 3N170 3N171
SILICON N-CHANNEL MOS FIELD-EFFECT TRANSISTORS
Enhancement Mode transistors designed for low-power switching applications.
- Low Switching Voltages
- VGS(th)';; 3.0 Vdc
- Fast Switching Times .- tr';; 10 ns
- Low Drain-Source Resistance rds(on) = 200 Ohms (Max) i
- Low Reverse Transfer Car;acitance Crss = 1.3 pF (Max)
.. Ma"ufdctur~<i USing the N~w Silicun Nitride Process Resulting in i a Stable VGS(th) and Gate Oxide Breakdown Protection to i Typical Transients of ± 150 Volts Peak
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MOS FIELD-EFFECT TRANSISTORS
N-CHANNEL
,-_. ------.-MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
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