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3N169 - MOS FIELD-EFFECT TRANSISTORS

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Part number 3N169
Manufacturer Unknown Manufacturer
File Size 342.80 KB
Description MOS FIELD-EFFECT TRANSISTORS
Datasheet download datasheet 3N169 Datasheet

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3N169 (SILICON) 3N170 3N171 I I SILICON N-CHANNEL MOS FIELD-EFFECT TRANSISTORS Enhancement Mode transistors designed for low-power switching applications. I • Low Switching Voltages - VGS(th)';; 3.0 Vdc • Fast Switching Times .- tr';; 10 ns I • Low Drain-Source Resistance rds(on) = 200 Ohms (Max) i • Low Reverse Transfer Car;acitance Crss = 1.3 pF (Max) I .. Ma"ufdctur~