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3N163 SERIES
P·Channel Enhancement·Mode MOS Transistors
PRODUCT SUMMARY
PART V(BR)OSS rOS(ON) 10
NUMBER (V)
(fi) (mA) PACKAGE
3N163
-40
250
-50
TO·72
3N164
-3~
300
-50
TO-72
Performance Curves: MRA (See Section 7)
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TO·72
BOTTOM VIEW
1 DRAIN
2 GATE 3 SUBSTRATE, CASE 4 SOURCE
= ABSOLUTE MAXIMUM RATINGS (TA 25°C unless otherwise noted)
PARAMETERS/TEST CONDITIONS
Drain-Source Voltage Gate-Source Voltage Transient Gate-Source Voltage Continuous Drain Current Power Dissipation Power Derating Operating Junction Storage Temperature Lead Temperature (1/16" from case for 10 seconds)
SYMBOL Vos VGS
ID PD
TJ T stg
TL
3N163
3N164
-40
-3~
±4o
±3o
±125
±125
-50
-50
375
375
3
3
-55 to 150
-65 to 200
300
UNITS V mA
mW DC
6-22
....
3N163 Datasheet
