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3N163, 3N164
P-CHANNEL ENHANCEMENT MODE
MOSFET
FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE FAST SWITCHING LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise stated) Drain-Source or Drain-Gate Voltage 3N163 3N164 Drain Current Storage Temperature Power Dissipation TO-72 case Power Dissipation SOT-143 case
-40V -30V 50mA -55ºC to +150ºC 375mW2 350mW3
SOT-143 TOP VIEW
TO-72 TOP VIEW
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
3N163
3N164 UNITS
CONDITIONS
MIN MAX MIN MAX
IGSS
Gate Leakage Current
-10
-10 pA VGS=-40V, VDS=0 (3N163), VSB=0V
TA=+125ºC
-25
-25
VGS=-30V, VDS=0 (3N164), VSB=0V
BVDSS
Drain-Source Breakdown Voltage
-40
-30
ID=-10µA VGS=0, VBS=0
BVSDS
Source-Drain Breakdown Voltag
3N163 Datasheet
