3N163 Datasheet and Specifications PDF

The 3N163 is a P-Channel Enhancement-Mode MOS Transistors.

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Part Number3N163 Datasheet
ManufacturerSiliconix
Overview 3N163 SERIES P·Channel Enhancement·Mode MOS Transistors PRODUCT SUMMARY PART V(BR)OSS rOS(ON) 10 NUMBER (V) (fi) (mA) PACKAGE 3N163 -40 250 -50 TO·72 3N164 -3~ 300 -50 TO-72 Performance. Gate-Body Leakage Zero Gate Voltage Drain Current Zero-Gate Voltage Source Current On-State Drain Current 3 V(BR)OSS VGS = 0 V, 10 = -10J.LA V(BR)SOS VGo =VBO = 0 V, Is = -10J.LA VGS(lh) VGS =Vos , 10 = -10J.LA V GS Vos = -15 V, 10 = -0.5 mA IGSS loss Isos 101ON) VOS = 0 V I VGS = -40 V .
Part Number3N163 Datasheet
DescriptionHigh Speed Switch
ManufacturerMicross
Overview 3N163 P-CHANNEL MOSFET The 3N163 is an enhancement mode P-Channel Mosfet The 3N163 is an enhancement mode P-Channel Mosfet designed for use as a General Purpose amplifier or switch The hermetically s. DIRECT REPLACEMENT FOR INTERSIL 3N163  ABSOLUTE MAXIMUM RATINGS1  @ 25°C (unless otherwise noted)  ‐65°C to +200°C  ‐55°C to +150°C  375mW  50mA  Maximum Temperatures  Storage Temperature  (See Packaging Information). Operating Junction Temperature  Maximum Power Dissipation  Continuous Power Diss.
Part Number3N163 Datasheet
DescriptionP-CHANNEL ENHANCEMENT MODE MOSFET
ManufacturerLINEAR SYSTEMS
Overview 3N163, 3N164 P-CHANNEL ENHANCEMENT MODE MOSFET FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE FAST SWITCHING LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwis. VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE FAST SWITCHING LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise stated) Drain-Source or Drain-Gate Voltage 3N163 3N164 Drain Current Storage Temperature Power Dissipation TO-72 case Power Dissipation SOT-143 case -40V .