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3N164 - P-Channel Enhancement-Mode MOS Transistors

Download the 3N164 datasheet PDF. This datasheet also covers the 3N163 variant, as both devices belong to the same p-channel enhancement-mode mos transistors family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (3N163-Siliconix.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 3N164
Manufacturer Siliconix
File Size 91.81 KB
Description P-Channel Enhancement-Mode MOS Transistors
Datasheet download datasheet 3N164 Datasheet

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Other Datasheets by Siliconix

Part Number Description
3N163 P-Channel Enhancement-Mode MOS Transistors
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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3N163 SERIES P·Channel Enhancement·Mode MOS Transistors PRODUCT SUMMARY PART V(BR)OSS rOS(ON) 10 NUMBER (V) (fi) (mA) PACKAGE 3N163 -40 250 -50 TO·72 3N164 -3~ 300 -50 TO-72 Performance Curves: MRA (See Section 7) .:rSiliconix ..z;;JI incorporated TO·72 BOTTOM VIEW 1 DRAIN 2 GATE 3 SUBSTRATE, CASE 4 SOURCE = ABSOLUTE MAXIMUM RATINGS (TA 25°C unless otherwise noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Transient Gate-Source Voltage Continuous Drain Current Power Dissipation Power Derating Operating Junction Storage Temperature Lead Temperature (1/16" from case for 10 seconds) SYMBOL Vos VGS ID PD TJ T stg TL 3N163 3N164 -40 -3~ ±4o ±3o ±125 ±125 -50 -50 375 375 3 3 -55 to 150 -65 to 200 300 UNITS V mA mW DC 6-22 ....