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3N210 - N-CHANNEL DUAL GATE MOS FIELD EFFECTTRANSISTORS

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Part number 3N210
Manufacturer ETC
File Size 720.37 KB
Description N-CHANNEL DUAL GATE MOS FIELD EFFECTTRANSISTORS
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    3N209 (SILICON) 3N210 N·CHANNEL DUAL·GATE SILlCON·NITRIDE PASSIVATED MOS FIELD·EFFECT TRANSISTORS · .. depletion mode dual gate transistors designed and characterized for UHF communications applications • Two Packages OfferedHermetic Metal TO· 72 - 3N209 Micro-H Plastic - 3N21 0 • Silicon Nitride Passivation for Excellent Long Term Stability • Zener Diode Protected Gates • Third Order Intermodulation Distortion Curve Provided • Common Source Power GainGps = 10 dB (Min) @f = 500 MHz • Noise Figure - 6.
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