60N035 Datasheet | Unknown Manufacturer

Bay Linear Linear Excellence N-Channel Field Effect Transistor Advance Information Description The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for low voltage applications such as automotive and other battery powered circuits where fast switching, low in-line power loss and resistance to transistors are needed. The TO-220 is offered in a 3-pin is universally preferred for all mercial-industrial applications at power dissipation level to approximately to 50 watts. Also, available in a D2 surface mount power package with a power dissipation up to 2 Watts Features - - - Critical DC Electrical parameters specified at elevated Temp. Rugged internal source-drain diode can eliminate the need for external Zener diode transient suppresser Super high density cell design for extremely low RDS(ON) VDSS = 30V RDS (ON) = 0.015 Ω ID = 60A Ordering Information Device 60N035T 60N035S Package TO-220 TO-263 ( D2 ) Temp. 0 to 150°C 0 to...