60N03L-10 Description
STB60N03L-10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMIRARY DATA TYPE STB60N03L-10 .. Unit V µA µA nA Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 Gate-body Leakage Current (V DS = 0) V GS = ± 20 V T c = 125 o C ON (∗) Symbol V GS(th) R DS(on) Parameter Gate Threshold Voltage V DS = VGS Static Drain-source On Resistance Test Conditions ID = 250 µ A T c = 100 o C...