are borne in mind. Table 1 matches some features of HEXFET Power MOSFETs with their bipolar counterparts. The HEXFET Power MOSFET used in all the examples is the IRF630. The control settings given in the examples are those suitable for the IRF630. The user must modify these values appropriately when testing a different device. The IRF630 was selected since it is a typical mid-range device with a voltage rating of 200 volts and a continuous current rating of 9 amps (with TC = 25°C). For measureme.
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Index
AN-957 (v.Int)
Measuring HEXFET®Characteristics
(HEXFET is the trademark for International Rectifier Power MOSFETs)
Topics covered: • • • • • • • • • • • • • • • • • • • Converting the nomenclature from bipolars to MOSFETs P-Channel HEXFET Power MOSFETs Initial settings Breakdown Drain leakage Gate threshold Gate leakage Transconductance On-resistance Diode drop Characteristics in synchronous rectification Transfer characteristics Measurements without a curve tracer Device capacitances Switching times Gate charge Reverse recovery A fixture to speed-up testing time Related topics
1. General Curve tracers have generally been designed for making measurements on bipolar transistors.
AN957 Datasheet
