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Index
AN-957 (v.Int)
Measuring HEXFET®Characteristics
(HEXFET is the trademark for International Rectifier Power MOSFETs)
Topics covered: • • • • • • • • • • • • • • • • • • • Converting the nomenclature from bipolars to MOSFETs P-Channel HEXFET Power MOSFETs Initial settings Breakdown Drain leakage Gate threshold Gate leakage Transconductance On-resistance Diode drop Characteristics in synchronous rectification Transfer characteristics Measurements without a curve tracer Device capacitances Switching times Gate charge Reverse recovery A fixture to speed-up testing time Related topics
1. General Curve tracers have generally been designed for making measurements on bipolar transistors.
AN957 Datasheet
