BUZ900X4S Description
MAGNA TEC 3 1 .5 (1 .2 4 0 ) 3 1 .7 (1 .2 4 8 ) 7 .8 (0 .3 0 7 ) 8 .2 (0 .3 2 2 ) 1 1 .8 (0 .4 6 3 ) 1 2 .2 (0 .4 8 0 ) W = 4 .1 (0 .1 6 1 ) 4 .3 (0 .1 6 9 ) H= 4 .8 (0 .1 8 7 ) 4 .9 (0 .1 9 3 ) (4 places) 8 .9 (0 .3 5 0 ) 9 .6 (0 .3 7 8 ) BUZ900X4S.
BUZ900X4S Key Features
- HIGH SPEED SWITCHING
- N-CHANNEL POWER MOSFET
- SEMEFAB DESIGNED AND DIFFUSED
- HIGH VOLTAGE (160V & 200V)
- HIGH ENERGY RATING
- Drain Pin 2
- Source Pin 3
- Gate Pin 4
- ENHANCEMENT MODE
- INTEGRAL PROTECTION DIODE