EFA480C-SOT89 Datasheet | Unknown Manufacturer

Features LOW COST SURFACE-MOUNT PLASTIC PACKAGE +34.0d Bm TYPICAL OUTPUT POWER 12.0d B TYPICAL POWER GAIN AT 2GHz 0.8d B TYPICAL NOISE FIGURE AT 2GHz +48d Bm TYPICAL OUTPUT 3rd ORDER INTERCEPT POINT AT 2GHz 0.5 X 4800 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY $ &# - - - 6285&( '5$,1 - $7( Applications - - Analog and Digital Wireless System HPA (Top View) All Dimensions In Mils ELECTRICAL CHARACTERISTICS (Ta = 25 OC) SYMBOLS P1d B G1d B PAE NF IP3 Idss Gm Vp BVgd BVgs Rth PARAMETERS/TEST CONDITIONS Output Power at 1d B pression f = 2GHz Vds=7V, Ids=750m A Gain at 1d B pression f = 2GHz Vds=7V, Ids=750m A Power Added Efficiency at 1d B pression Vds=7V, Ids=750m A f = 2GHz Noise Figure f = 2GHz Vds=5V, Ids=300m A Vds=5-7V, Ids=750m A Output 3rd Order Intercept Point f = 2GHz Vds=5-7V, Ids=750m A Vds=5V, Ids=300m A Saturated Drain Current Vds=3V, Vgs=0V Transconductance Pinch-off Voltage Vds=3V, Vgs=0V Vds=3V, Ids=14m A -11 -7 MIN 32.5 10.0 TYP 34.0 12.0 45 0.8 2.0 48 39 880 560 1360 720 -2.0 -15 -14 14- o UNIT d Bm d B % d B d Bm 1760 m A m S -3.5 V V V C/W Drain Breakdown Voltage Igd=4.8m A Source Breakdown Voltage Igs=4.8m A Thermal Resistance - Overall Rth depends on case mounting. MAXIMUM RATINGS AT 25OC SYMBOLS Vds Vgs Ids Igsf Pin Tch Tstg Pt PARAMETERS Drain-Source Voltage Gate-Source Voltage Drain Current Forward Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 12V -8V Idss 120m A 32d Bm 175o C -65/175o C 10 W 7V -4V 1.2A 20m A @ 3d B pression 150o C -65/150o C 8.4 W CONTINUOUS2 Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054 Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site:...