EN29F002 Overview
The EN29F002 / EN29F002N is a 2-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 256K words with 8 bits per word, the 2M of memory is arranged in seven sectors (with top/bottom configuration), including one 16K Byte Boot Sector, two 8K Byte Parameter sectors, and four main sectors (one 32K Byte and three 64K Byte). Any byte can be programmed typically at 10µs.
EN29F002 Key Features
- 5.0V ± 10% for both read/write operation
- Read Access Time
- 45ns, 55ns, 70ns, and 90ns
- Fast Read Access Time
- 70ns with Cload = 100pF
- 45ns, 55ns with Cload = 30pF
- Sector Architecture: One 16K byte Boot Sector, Two 8K byte Parameter Sectors, one 32K byte and three 64K byte main Secto
- Boot Block Top/Bottom Programming Architecture
- High performance program/erase speed Byte program time: 10µs typical Sector erase time: 500ms typical Chip erase time: 3
- JEDEC standard DATA polling and toggle bits feature