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EN29F002A - 2 Megabit (256K x 8-bit) Flash Memory

General Description

The EN29F002A / EN29F002AN is a 2-Megabit, electrically erasable, read/write non-volatile flash memory.

Key Features

  • 5.0V ± 10% for both read/write operation.
  • Read Access Time - 45ns, 55ns, 70ns, and 90ns.
  • Fast Read Access Time - 70ns with Cload = 100pF - 45ns, 55ns with Cload = 30pF.
  • Sector Architecture: One 16K byte Boot Sector, Two 8K byte Parameter Sectors, one 32K byte and three 64K byte main Sectors.
  • Boot Block Top/Bottom Programming Architecture.
  • High performance program/erase speed Byte program time: 10µs typical Sector erase time: 500ms typical Ch.

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Datasheet Details

Part number EN29F002A
Manufacturer Unknown Manufacturer
File Size 431.89 KB
Description 2 Megabit (256K x 8-bit) Flash Memory
Datasheet download datasheet EN29F002A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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EN29F002A / EN29F002AN EN29F002A / EN29F002AN 2 Megabit (256K x 8-bit) Flash Memory FEATURES • 5.0V ± 10% for both read/write operation • Read Access Time - 45ns, 55ns, 70ns, and 90ns • Fast Read Access Time - 70ns with Cload = 100pF - 45ns, 55ns with Cload = 30pF • Sector Architecture: One 16K byte Boot Sector, Two 8K byte Parameter Sectors, one 32K byte and three 64K byte main Sectors • Boot Block Top/Bottom Programming Architecture • High performance program/erase speed Byte program time: 10µs typical Sector erase time: 500ms typical Chip erase time: 3.