FM24CL64 Datasheet | Unknown Manufacturer

Preliminary 64Kb 2.7V-3.6V FRAM Serial Memory Features 64K bit Ferroelectric Nonvolatile RAM - Organized as 8,192 x 8 bits - Unlimited read/write cycles - 10 year data retention at 85° C - No Delay™ write - Advanced high-reliability ferroelectric process Fast Two-wire Serial Interface - Up to 1 MHz maximum bus frequency - Direct hardware replacement for EEPROM - Supports legacy timing for 100 k Hz & 400 k Hz Low Power Operation - True 2.7V-3.6V operation - 75 µA Active current (100 k Hz) - 1 µA Standby current Industry Standard Configuration - Industrial temperature -40° C to +85° C - 8-pin SOP Description The FM24CL64 is a 64-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile but operates in other respects as a RAM. It provides reliable data retention for 10 years while eliminating the plexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories. The FM24CL64 performs write operations at bus speed. No write delays are incurred. Data is written to the memory array mere hundreds of nanoseconds after it has been successfully transferred to the device. The next bus cycle may mence immediately. Fast-write time and unlimited read/write endurance make it superior to other types of nonvolatile memory and a good substitute for ordinary SRAM These capabilities make the FM24CL64 ideal for nonvolatile memory applications requiring frequent or rapid writes. Examples range from data collection where the number of write cycles may be critical, to demanding industrial controls where the long write time of EEPROM can cause data loss. The bination of Features allows more frequent data writing with less overhead for the system. The FM24CL64 provides substantial benefits to users of serial EEPROM, yet these benefits are available in a hardware drop-in replacement. The FM24CL64 is provided in industry standard 8-pin surface mount package using...