H9014
H9014 is NPN EPITAXIAL SILICON TRANSISTOR manufactured by Unknown Manufacturer.
NPN EPITAXIAL SILICON TRANSISTOR
AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSCILLATOR
- DIE SIZE
- METALLIZATION
Top Back
- DIE THICKNESS
- PASSIVATION
- BONDING PAD SIZE Emitter Base
350µm×350µm
Al V/ Ni/Au Typ. 220µm Silicon-Nitride
140µm×140µm 110µm×110µm
H9014 h FE CLASSIFICATION
Classification h FE
A 60~150
B 100~300
CD 200~600 400-1000
Collector on Backside
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC
SYMBOL TEST CONDITION
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage
BVCBO BVCEO BVEBO
ICBO IEBO h FE VCE(sat)
IC=100µA, IE=0 Ic=-1m A, IB=0 IE=-100µA, IC=0 VCB=50V, IE=0 VEB=5V, IC=0
VCE=5V, IC=-1m A IC=100m A, IB=-5m A
MIN 50 45 5
280 0.14
50 50 1000 0.3
UNIT V V V n A n A
NOTES: Due to probe testing limitations, only the DC parameters are tested.
DS-H9014-001...
