The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
NPN EPITAXIAL SILICON TRANSISTOR
AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSCILLATOR
• DIE SIZE • METALLIZATION
Top Back • DIE THICKNESS • PASSIVATION • BONDING PAD SIZE Emitter Base
350µm×350µm
Al V/ Ni/Au Typ.