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Shantou Huashan Electronic Devices Co.,Ltd.
NPN SILICON TRANSISTOR
H9014
█ PRE-AMPLIFIER，LOW LEVEL & LOW NOISE █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃）
TO-92
Tstg——Storage Temperature………………………… -55~150℃
Tj——Junction Temperature…………………………………150℃
PC——Collector Dissipation…………………………………450mW VCBO——Collector-Base Voltage………………………………50V VCEO——Collector-Emitter Voltage……………………………45V
1―Emitter，E 2―Base，B 3―Collector，C
VEBO——Emitter-Base Voltage………………………………5V IC——Collector Current……………………………………100mA
█ ELECTRICAL CHARACTERISTICS（Ta=25℃）
Symbol
ICBO IEBO HFE(1) VCE(sat) VBE(sat) BVCBO BVCEO BVEBO Cob
fT
Characteristics
Min Typ Max Unit
Test Conditions
Collector Cut-off Current
0.05 μA
VCB=30V, IE=0
Emitter Cut-off Current
0.
H9014 Datasheet
