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IXSH40N60 - High Speed IGBT

Features

  • G = Gate E = Emitter TAB = Collector G E (TAB) (TAB) G C E TO-247 AD (IXSH) TO-268 (D3) ( IXST) 1.13/10 Nm/lb. in. 6 300 g °C Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 4 TJ = 25°C TJ = 125°C 7 25 1 ±100 2.2 V V mA mA nA V BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250 mA, VGE = 0 V = 4 mA, VCE = VGE VCE = 0.8.
  • VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V IXYS reserves the right to change limits, test con.

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Datasheet Details

Part number IXSH40N60
Manufacturer ETC
File Size 55.53 KB
Description High Speed IGBT
Datasheet download datasheet IXSH40N60 Datasheet
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High Speed IGBT Short Circuit SOA Capability IXSH 40N60B VCES = = IXST 40N60B IC25 VCE(sat) = tfi typ = 600V 75A 2.2V 100 ns Preliminary data Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Md Weight Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Mounting torque Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 2.7 W Clamped inductive load, VCC= 0.8 VCES VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 22 W, non repetitive TC = 25°C Maximum Ratings 600 600 ±20 ±30 75 40 150 ICM = 80 @ 0.8 VCES 10 280 -55 ... +150 150 -55 ...
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