IXSH40N60 - High Speed IGBT

Product Overview

Part number	IXSH40N60
Manufacturer	ETC
File Size	55.53 KB
Description	High Speed IGBT
Datasheet	IXSH40N60 Datasheet
Additional preview pages of the IXSH40N60 datasheet.

G = Gate E = Emitter TAB = Collector G E (TAB) (TAB) G C E TO-247 AD (IXSH) TO-268 (D3) ( IXST) 1.13/10 Nm/lb. in. 6 300 g °C Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 4 TJ = 25°C TJ = 125°C 7 25 1 ±100 2.2 V V mA mA nA V BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250 mA, VGE = 0 V = 4 mA, VCE = VGE VCE = 0.8.
VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V IXYS reserves the right to change limits, test con.

📁 Similar Datasheet

IXSH40N60 - Low VCE(sat) IGBT (IXYS Corporation)
IXSH40N60A - Low VCE(sat) IGBT (IXYS Corporation)
IXSH40N60B - High Speed IGBT (IXYS)
IXSH45N100 - Low VCE(sat) IGBT - Short Circuit SOA Capability (IXYS Corporation)
IXSH45N120 - High Voltage IGBT (IXYS)
IXSH45N120B - High Voltage IGBT (IXYS)
IXSH10N60B2D1 - High-Speed IGBT (IXYS)
IXSH15N120A - IGBT (IXYS Corporation)

Other Datasheets by ETC

Published: Apr 5, 2005 |