IXSH40N60
IXSH40N60 is High Speed IGBT manufactured by Unknown Manufacturer.
Features
G = Gate E = Emitter TAB = Collector G E (TAB) (TAB) G C E TO-247 AD (IXSH)
TO-268 (D3) ( IXST)
1.13/10 Nm/lb.in. 6 300 g °C
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 4 TJ = 25°C TJ = 125°C 7 25 1 ±100 2.2 V V m A m A n A V
BVCES VGE(th) ICES IGES VCE(sat)
IC IC
= 250 m A, VGE = 0 V = 4 m A, VCE = VGE
VCE = 0.8
- VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V
IXYS reserves the right to change limits, test conditions, and dimensions.
98521B (7/00)
© 2000 IXYS All rights reserved
1-2
IXSH 40N60B IXST 40N60B
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 16 23 3700 VCE = 25 V, VGE = 0 V, f = 1 MHz 280 80 190 IC = IC90, VGE = 15 V, VCE = 0.5 VCES 45 90 50 Inductive load, TJ = 25°C IC = IC90, VGE = 15 V, L = 100 µH VCE = 0.8 VCES, RG = 2.7 W 50 110 120 1.8 55 Inductive load, TJ = 125°C IC = IC90, VGE = 15 V, VCE = 0.8 VCES, RG = 2.7 W 170 1.7 190 180 2.0 200 200 2.6 S p F p F p F n C n C n C ns ns ns ns m J ns ns m J ns ns m J 0.45 K/W (IXSH40N60B) 0.25 K/W
Dim. Millimeter Min. Max. A B C D E F G H J K L M N 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.49 5.4 6.2 1.65 2.13 4.5 1.0 1.4 10.8 11.0 4.7 0.4 5.3 0.8 Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102
TO-247 AD (IXSH) Outline gfs C ies Coes C res Qg Qge Qgc td(on) t ri td(off) tfi Eoff td(on) t ri Eon td(off) tfi Eoff Rth JC Rth CK
IC = IC90; VCE = 10 V, Pulse test, t £ 300 ms, duty cycle £ 2 %
1.5 2.49
TO-268AA (D3 PAK)
Dim.
Min. Remended Footprint
A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4
Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85...
