IXSH40N60B - High Speed IGBT

Features

International standard packages.
Guaranteed Short Circuit SOA capability.
Low VCE(sat) - for low on-state conduction losses.
High current handling capability.
MOS Gate turn-on - drive simplicity.
Fast Fall Time for switching speeds up to 50 kHz.

IXYS

Datasheet Details

Part number	IXSH40N60B
Manufacturer	IXYS
File Size	54.21 KB
Description	High Speed IGBT
Datasheet	IXSH40N60B Datasheet
Additional preview pages of the IXSH40N60B datasheet.

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Full PDF Text Transcription

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High Speed IGBT Short Circuit SOA Capability IXSH 40N60B VCES = IXST 40N60B IC25 = VCE(sat) = tfi typ = 600V 75A 2.2V 100 ns Preliminary data Symbol Test Conditions VCES VCGR VGES V GEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ T JM Tstg Md Weight TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE= 15 V, TJ = 125°C, RG = 2.7 W Clamped inductive load, VCC= 0.8 VCES VGE= 15 V, VCE = 360 V, TJ = 125°C R G = 22 W, non repetitive TC = 25°C Mounting torque Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Ratings 600 600 ±20 ±30 75 40 150 ICM = 80 @ 0.8 VCES 10 V V V V A A A A ms 280 W -55 ... +150 150 -55 ... +150 °C °C °C 1.13/10 Nm/lb.in.

Published: Oct 27, 2015 |