IXSH45N120 Description
+150 V V V V A A A A ms TO-247 AD G C E C = Collector, TAB = Collector G = Gate, E = Emitter,.
IXSH45N120 Key Features
- for minimum on-state conduction losses MOS Gate turn-on
- drive simplicity
IXSH45N120 is High Voltage/ Low VCE(sat) IGBT manufactured by Unknown Manufacturer.
| Manufacturer | Part Number | Description |
|---|---|---|
IXYS |
IXSH45N120 | High Voltage IGBT |
IXYS |
IXSH45N120B | High Voltage IGBT |
+150 V V V V A A A A ms TO-247 AD G C E C = Collector, TAB = Collector G = Gate, E = Emitter,.