IXSH45N120B Overview
+150 °C °C °C 1.13/10 Nm/lb.in.
IXSH45N120B Key Features
- Epitaxial Silicon drift region
- fast switching
- small tail current
- MOS gate turn-on for drive simplicity
Datasheet Details
| Part number | IXSH45N120B |
|---|---|
| Datasheet | IXSH45N120B-IXYS.pdf |
| File Size | 53.55 KB |
| Manufacturer | IXYS (now Littelfuse) |
| Description | High Voltage IGBT |
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