IXSH45N120B Description
+150 °C °C °C 1.13/10 Nm/lb.in.
IXSH45N120B Key Features
- Epitaxial Silicon drift region
- fast switching
- small tail current
- MOS gate turn-on for drive simplicity
- Part: IXSH45N120B
- Manufacturer: IXYS
- Size: 53.55 KB
Similar Part Number
| Manufacturer | Part Number | Description |
|---|---|---|
| ETC Unknown Manufacturer |
IXSH45N120 | High Voltage/ Low VCE(sat) IGBT |