NDS9405
Overview
These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes.
- 3A, -20V. RDS(ON) = 0.10Ω @ VGS = -10V High density cell design for extremely low RDS(ON) High power and current handling capability in a widely used surface mount package.
