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RX65T300HS2A
650V GaN Power Transistor (FET)
Features
• Easy to use, compatible with standard gate drivers • Excellent QG x RDS(on) figure of merit (FOM) • Low QRR, no free-wheeling diode required • Low switching loss • RoHS compliant and Halogen-free
Applications
• High efficiency power supplies • High efficiency USB PD adapters • Other consumer electronics
S
S
D
G
Product Summary
VDSS
650
V
RDS(on), typ
240 mΩ
QG, typ
21.