SHF-0186 Description
Stanford Microdevices’ SHF-0186 is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added efficiency and improved linearity. Output power at 1dB pression for the SHF-0186 is +28 dBm when biased for Class AB operation at 8V and 100mA.
SHF-0186 Key Features
- Patented AlGaAs/GaAs Heterostructure FET
- +28 dBm P1dB Typical
- +40 dBm Output IP3 Typical
- High Drain Efficiency: Up to 46% at Class AB
- 17 dB Gain at 900 MHz (Application circuit)
- 15 dB Gain at 1900 MHz (Application circuit)
- Gmax Guaranteed at 12 GHz