Datasheet Details
| Part number | SHF-0186 |
|---|---|
| Manufacturer | Unknown Manufacturer |
| File Size | 159.39 KB |
| Description | DC-12 GHz/ 0.5 Watt AlGaAs/GaAs HFET |
| Datasheet |
 SHF-0186 Datasheet
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General Description
Stanford Microdevices’ SHF-0186 is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package.
HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added efficiency and improved linearity.
Key Features
- Patented AlGaAs/GaAs Heterostructure FET Technology 40 VDS=8V, IDQ=100mA 30 GMax(dB) 20 10 0 -10 0 2 4 6 8 10 12 Frequency (GHz) S21 Gmax.
- +28 dBm P1dB Typical.
- +40 dBm Output IP3 Typical.
- High Drain Efficiency: Up to 46% at Class AB.
- 17 dB Gain at 900 MHz (.