SHF-0186K
Description
Stanford Microdevices’ SHF-0186K is a high performance Ga As Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added efficiency and improved linearity. Output power at 1d B pression for the SHF-0186K is +28 d Bm when biased for Class AB operation at 8V and 100m A. The +40 d Bm third order intercept makes it ideal for high dynamic range, high intercept point requirements. It is well suited for use in both analog and digital wireless munication infrastructure and subscriber equipment including cellular PCS, CDPD, wireless data, and pagers. Gain vs. Frequency
DC-3 GHz, 0.5 Watt Al Ga As/Ga As HFET
Product Features
- Patented Al Ga As/Ga As Heterostructure FET
Technology
VDS=8V, IDQ=100m A
GMax(d B)
20 10 0 -10 0 2 4 6 8 10 12
Frequency (GHz)
Device Characteristics, T = 25ºC VDS = 8V, IDQ = 100 m A Maximum Available Gain Insertion Power Gain Gain...
