SMW200-28C Datasheet | Unknown Manufacturer

DESCRIPTION The 2SK3324 is N-Channel MOS FET device that features a Low gate charge and excellent switching characteristics, and Designed for high voltage applications such as switching power supply, AC adapter. ORDERING INFORMATION PART NUMBER 2SK3324 PACKAGE TO-3P FEATURES - Low gate charge : QG = 32 n C TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A) - Gate voltage rating : ±30 V - Low on-state resistance : RDS(on) = 2.8 Ω MAX. (VGS = 10 V, ID = 3.0 A) - Avalanche capability ratings (TO-3P) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tstg Note2 Note2 900 ±30 ±6 ±18 120 3.0 - 55 to +150 6.0 21.6 V V A A W W °C A m J Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Storage Temperature Single Avalanche Current Single Avalanche Energy IAS EAS Notes 1. PW ≤ 10 μs, Duty cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 V → 0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D14203EJ3V0DS00 (3rd edition) Date Published November 2006 NS CP(K) Printed in Japan The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. Free Datasheet http://.. 2SK3324 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS Drain Leakage Current Gate to Source Leakage Current Gate to Source Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain...