SMW200-28C Datasheet and Specifications PDF

The 2SK3324 is N-Channel MOS FET device that features a Low gate charge and excellent switching characteristics, and Designed for high voltage applications such as switching power supply, AC adapter. .

a Low gate charge and excellent switching characteristics, and Designed for high voltage applications such as switching power supply, AC adapter. ORDERING INFORMATION PART NUMBER 2SK3324 PACKAGE TO-3P FEATURES
* Low gate charge : QG = 32 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A)
* Gate voltage.

PD-97574 2N7627UC IRHLUC7970Z4 RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (LCC-6) Product Summary Part Number Radiation Level RDS(on) ID IRHLUC7970Z4 100K Rads (Si) 1.60Ω -0.65A IRHLUC.

n n n n n n n n n n 5V CMOS and TTL Compatible Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Complimentary N-Channel Available IRHLUC770Z4 Absolute Maximum Ratings (Per Die) Parame.