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UC62LS2008 - Low Power CMOS SRAM 256K X 8 Bits

General Description

UC62LS2008 -20/-25

Key Features

  • Vcc operation voltage : 3.0V ~ 3.6V.
  • Low power consumption : 20mA (Max. ) operating current 1uA (Typ. ) CMOS standby current.
  • High Speed Access time : 25ns (Max. ) at Vcc = 3.0V.
  • Automatic power down when chip is deselected.
  • Three state outputs and TTL compatible.
  • Data retention supply voltage as low as 1.2V.
  • Easy expansion with CE and OE options The UC62LS2008 is a high performance, very low power CMOS Static Random Access Memory or.

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Datasheet Details

Part number UC62LS2008
Manufacturer Unknown Manufacturer
File Size 525.03 KB
Description Low Power CMOS SRAM 256K X 8 Bits
Datasheet download datasheet UC62LS2008 Datasheet

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www.DataSheet4U.com Low Power CMOS SRAM 256K X 8 Bits Description UC62LS2008 -20/-25 Features: • Vcc operation voltage : 3.0V ~ 3.6V • Low power consumption : 20mA (Max.) operating current 1uA (Typ.) CMOS standby current • High Speed Access time : 25ns (Max.) at Vcc = 3.0V • Automatic power down when chip is deselected • Three state outputs and TTL compatible • Data retention supply voltage as low as 1.2V • Easy expansion with CE and OE options The UC62LS2008 is a high performance, very low power CMOS Static Random Access Memory organized as 262,144 words by 8 bits and operates from 3.0V to 3.6V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 1uA and maximum access time of 25ns in 3.