UC62LS2008 - Low Power CMOS SRAM 256K X 8 Bits

Datasheet Summary

Description

UC62LS2008 -20/-25

Features

Vcc operation voltage : 3.0V ~ 3.6V.
Low power consumption : 20mA (Max. ) operating current 1uA (Typ. ) CMOS standby current.
High Speed Access time : 25ns (Max. ) at Vcc = 3.0V.
Automatic power down when chip is deselected.
Three state outputs and TTL compatible.
Data retention supply voltage as low as 1.2V.
Easy expansion with CE and OE options The UC62LS2008 is a high performance, very low power CMOS Static Random Access Memory or.

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Datasheet Details

Part number	UC62LS2008
Manufacturer	ETC
File Size	525.03 KB
Description	Low Power CMOS SRAM 256K X 8 Bits
Datasheet	UC62LS2008 Datasheet
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www.DataSheet4U.com Low Power CMOS SRAM 256K X 8 Bits Description UC62LS2008 -20/-25 Features: • Vcc operation voltage : 3.0V ~ 3.6V • Low power consumption : 20mA (Max.) operating current 1uA (Typ.) CMOS standby current • High Speed Access time : 25ns (Max.) at Vcc = 3.0V • Automatic power down when chip is deselected • Three state outputs and TTL compatible • Data retention supply voltage as low as 1.2V • Easy expansion with CE and OE options The UC62LS2008 is a high performance, very low power CMOS Static Random Access Memory organized as 262,144 words by 8 bits and operates from 3.0V to 3.6V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 1uA and maximum access time of 25ns in 3.

Published: Oct 29, 2007 |