UC62LS2048 - Low Power CMOS SRAM

General Description

UC62LS2048 -20/-25

Key Features

Vcc operation voltage : 3.0 V~ 3.6V.
Low power consumption : 20mA (Max. ) operating current 1uA (Typ. ) CMOS standby current.
High Speed Access time : 25ns (Max. ) at Vcc = 3.0V.
Automatic power down when chip is deselected.
Three state outputs and TTL compatible.
Data retention supply voltage as low as 1.2V.
Easy expansion with CE and OE options The UC62LS2048 is a high performance, low power CMOS Static Random Access Memory organiz.

UC62LS2048 low power cmos sram by Unknown Manufacturer - Datasheet Preview

Datasheet Details

Part number	UC62LS2048
Manufacturer	Unknown Manufacturer
File Size	497.38 KB
Description	Low Power CMOS SRAM
Datasheet	UC62LS2048 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
UC62130	CMOS IC	UTC
UC62133	CMOS IC	UTC
UC62140	CMOS IC	UTC
UC62150	CMOS IC	UTC
UC621XX	CMOS IC	UTC

Other Datasheets by Unknown Manufacturer

Part Number	Description
UC62LS2008	Low Power CMOS SRAM 256K X 8 Bits
UC62LS1008	Low Power CMOS SRAM 128K x 8 Bits
UC62LS4008	Low Power CMOS SRAM 512K X 8 Bits
UC62LS4096	Low Power CMOS SRAM
UC62LV0256	Low Power CMOS SRAM 32K X8 Bits

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

www.DataSheet4U.com Low Power CMOS SRAM 128K X 16 Description UC62LS2048 -20/-25 Features: • Vcc operation voltage : 3.0 V~ 3.6V • Low power consumption : 20mA (Max.) operating current 1uA (Typ.) CMOS standby current • High Speed Access time : 25ns (Max.) at Vcc = 3.0V • Automatic power down when chip is deselected • Three state outputs and TTL compatible • Data retention supply voltage as low as 1.2V • Easy expansion with CE and OE options The UC62LS2048 is a high performance, low power CMOS Static Random Access Memory organized as 131,072 words by 16 and operates from 3.0 V to 3.6V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 1uA and maximum access time of 25ns in 3.0V operation.