FEATURES
: z NF=1.8dB TYP. @ f=0.9GHz, VCE=10V, IC=10mA z High Gain S21e 2 =13dB TYP. @ f=0.9GHz, VCE=8V, IC =40mA DESCRIPTION
: Marking: N37 PIN CONNECTIONS 1. collector 2.base 3&4.emitter SOT143 ABSOLUTE MAXIMUM RATINGS
(Ta = 25 OC) Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range Symbol Value Unit VCBO 20 V VCEO 12 V VEBO 3 V IC 100 mA Ptot 200 mW Tj 150 OC TS -65 to +150 OC 1 BFG540 Characteristics at Tamb=25 OC Symbol Min. DC Current Gain at VCE=5V, IC=15mA hFE 100 Collector Cutoff Current at VCB=10V ICBO - Emitter Cutoff Current at VEB=1V IEBO - Gain Bandwidth Product at VCE=8V, IC=40mA Feed back Capacitance 1) fT - at VCE=8V, f=1MHz C re - Insertion Power Gain at VCE=8V, IC=40mA, f=0.9GHz S21e 2 7 Noise Figure at VCE=10V, IC=10mA, f=0.9GHz NF - 1) Measured with 3 terminal bridge, Emitter and case should be grounded. Typ. 9 0.65 13 1.8 Max. 250 1.0 1.0 1.5 2.5 Unit - µA µA...
EVVOSEMI
