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BFG540 - SOT-343R NPN Transistor

Download the BFG540 datasheet PDF. This datasheet also covers the BFG540-1 variant, as both devices belong to the same sot-343r npn transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

NF = 1.3 dB TYP.

High Gain ︱S21︱2 =16dB TYP.

Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in low noise ,high-gain amplifiers

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Note: The manufacturer provides a single datasheet file (BFG540-1-INCHANGE.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN RF Transistor DESCRIPTION ·Low Noise Figure NF = 1.3 dB TYP. @VCE = 8 V, IC = 10 mA, f = 900 MHz ·High Gain ︱S21︱2 =16dB TYP. @VCE= 8 V,IC = 40 mA,f = 900 MHz ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in low noise ,high-gain amplifiers and linear broadband amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range BFG540 VALUE 20 12 2.5 120 0.5 150 -65~150 UNIT V V V mA W ℃ ℃ isc website:www.iscsemi.