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BFG540W - NPN 9 GHz wideband transistor

General Description

NPN silicon planar epitaxial transistors in 4-pin dual-emitter SOT343N and SOT343R plastic packages.

Key Features

  • High power gain.
  • Low noise figure.
  • High transition frequency.
  • Gold metallization ensures excellent reliability.

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Full PDF Text Transcription (Reference)

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DISCRETE SEMICONDUCTORS DATA SHEET BFG540W BFG540W/X; BFG540W/XR NPN 9 GHz wideband transistor Product specification Supersedes data of 1997 Dec 04 2000 May 23 NXP Semiconductors NPN 9 GHz wideband transistor Product specification BFG540W BFG540W/X; BFG540W/XR FEATURES  High power gain  Low noise figure  High transition frequency  Gold metallization ensures excellent reliability. APPLICATIONS RF front end wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT2, CT3, PCN, DECT, etc.), radar detectors, pagers, satellite television tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre-optic systems. DESCRIPTION NPN silicon planar epitaxial transistors in 4-pin dual-emitter SOT343N and SOT343R plastic packages.