BFG540W Description
NPN silicon planar epitaxial transistors in 4-pin dual-emitter SOT343N and SOT343R plastic packages. halfpage 3 4 2 Top view 1 MSB842 Fig.2 SOT343R. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS VCBO VCES IC Ptot hFE Cre fT GUM |s21|2 F collector-base voltage open emitter collector-emitter voltage RBE = 0 collector current (DC) total power dissipation Ts 85 C DC current gain IC = 40 mA;.
BFG540W Key Features
- High power gain
- Low noise figure
- High transition frequency
- Gold metallization ensures