BFG540W
FEATURES
- High power gain
- Low noise figure
- High transition frequency
- Gold metallization ensures excellent reliability.
APPLICATIONS
RF front end wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT2, CT3, PCN, DECT, etc.), radar detectors, pagers, satellite television tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre-optic systems.
DESCRIPTION
NPN silicon planar epitaxial transistors in 4-pin dual-emitter SOT343N and SOT343R plastic packages.
MARKING
TYPE NUMBER BFG540W BFG540W/X BFG540W/XR
CODE N9 N7 N8
PINNING
PIN DESCRIPTION
BFG540W (see Fig.1) 1 collector 2 base 3 emitter 4 emitter
BFG540W/X (see Fig.1) 1 collector 2 emitter 3 base 4 emitter
BFG540W/XR (see Fig.2) 1 collector 2 emitter 3 base 4 emitter lfpage
1 Top view
MBK523
Fig.1 SOT343N. halfpage
2 Top view
MSB842
Fig.2 SOT343R.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
VCBO VCES IC Ptot h FE Cre f T...
