BFG541
FEATURES
- High power gain
- Low noise figure
- High transition frequency
- Gold metallization ensures excellent reliability. DESCRIPTION
NPN silicon planar epitaxial transistor, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre-optic systems. The transistors are mounted in a plastic SOT223 envelope. PINNING PIN 1 2 3 4 base emitter collector DESCRIPTION emitter page
Top view
MSB002
- 1
Fig.1 SOT223.
September 1995
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
QUICK REFERENCE DATA SYMBOL VCBO VCES IC Ptot h FE Cre f T GUM PARAMETER collector-base voltage collector-emitter voltage DC collector current total power dissipation DC current gain feedback capacitance transition frequency maximum unilateral power gain up to Ts = 140 °C; note 1 IC =...
