EVVOSEMI FMMT491
NPN TRANSISTOR
MAXIMUM RATINGS
(TA=25℃ unless otherwise noted) Symbol Parameter VCBO VCEO Collector-Base Voltage Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current -Continuous PC Collector Power Dissipation Tj Junction Temperature Tstg Storage Temperature Value 40 25 5 1.8 0.3 150 -55-150ELECTRICAL CHARACTERISTICS
(Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP Units V V V A W ℃ ℃ MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100μA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100μA, IC=0 5 V Collector cut-off current ICBO VCB=40V, IE=0 0.1 μA Collector cut-off current ICEO VCB=20V, IE=0 0.1 μA Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 μA DC current gain hFE(1) VCE=1V, IC= 100mA 200 350 hFE(2) VCE=1V, IC= 800mA 40 Collector-emitter saturation voltage VCE(sat) IC=800mA, IB= 80mA 0.5 V Base-emitter saturation voltage Transition frequency VBE(sat) IC=800mA, IB= 80...