The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
SEMICONDUCTOR
TECHNICAL DATA
FMMT491 TRANSISTOR (NPN)
FEATURES
Low equivalent on-resistance
Marking :491
MAXIMUM RATINGS (Ta=25 unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
80
VCEO Collector-Emitter Voltage
60
VEBO Emitter-Base Voltage
5
IC Collector Current
1
ICM Peak Pulse Current
2
PC Collector Power Dissipation
250
RΘJA Tj Tstg
Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature
500 150 -55~+150
Unit V V V A A
mW ℃/W
℃ ℃
FMMT491
3
2 1 SOT–23
COLLECTOR 3
1 BASE
2 EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage Collector-emitter breakdown voltage
V(BR)CBO V(BR)CEO1
IC=100μA,IE=0 IC=10mA,IB=0
Emitter-base brea