First Silicon FMMT491
NPN Transistor
FEATURES
Low equivalent on-resistance Marking :491MAXIMUM RATINGS
(Ta=25 unless otherwise noted) Symbol Parameter Value VCBO Collector-Base Voltage 80 VCEO Collector-Emitter Voltage 60 VEBO Emitter-Base Voltage 5 IC Collector Current 1 ICM Peak Pulse Current 2 PC Collector Power Dissipation 250 RΘJA Tj Tstg Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature 500 150 -55~+150 Unit V V V A A mW ℃/W ℃ ℃ FMMT491 3 2 1 SOT–23 COLLECTOR 3 1 BASE 2 EMITTERELECTRICAL CHARACTERISTICS
(Ta=25 unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage Collector-emitter breakdown voltage V(BR)CBO V(BR)CEO1 IC=100μA,IE=0 IC=10mA,IB=0 Emitter-base breakdown voltage V(BR)EBO IE=100μA,IC=0 Collector cut-off current ICBO VCB=60V,IE=0 Emitter cut-off current IEBO VEB=4V,IC=0 DC current gain Collector-emitter saturation voltage Base