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IRFR9024N - 60V P-Channel Enhancement Mode MOSFET

General Description

The IRFR0924N uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS = -60V ID =-20 A RDS(ON) < 75mΩ @ VGS=10V.

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Datasheet Details

Part number IRFR9024N
Manufacturer EVVOSEMI
File Size 1.78 MB
Description 60V P-Channel Enhancement Mode MOSFET
Datasheet download datasheet IRFR9024N Datasheet

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IRFR9024N Description 60V P -Channel Enhancement Mode MOSFET The IRFR0924N uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.