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IRFR9024N - P-Channel MOSFET

Key Features

  • ƽ VDS (V) =- 55V ƽ ID =-11 A (VGS =-10V) ƽ RDS(ON) ˘ 0.175ȍ (VGS =-10V) P-Channel MOSFET IRFR9024N MOSFET TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 4 + 1.50 0.15 -0.15 2.30 +0.1 -0.1 0.50 +0.8 -0.7 Unit: mm 3.80 + 5.55 0.15 -0.15 +0 2.65 .25 -0.1 + 0.1 5 0 .5 0 -0.15 +0 1.50 .28 -0.1 + 9.70 0.2 -0.2 0.80+0.1 -0.1 0.127 m ax D G S 2.3 4 .60 +0.15 -0.15 0.60+ 0.1 - 0.1 1 Gate 2 Drain 3 Source 4 Drain Ƶ Absolute Maximum Ratings Parameter Symbol Drain-Source Voltage VDS Gate-Source.

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SMD Type Ƶ Features ƽ VDS (V) =- 55V ƽ ID =-11 A (VGS =-10V) ƽ RDS(ON) ˘ 0.175ȍ (VGS =-10V) P-Channel MOSFET IRFR9024N MOSFET TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 4 + 1.50 0.15 -0.15 2.30 +0.1 -0.1 0.50 +0.8 -0.7 Unit: mm 3.80 + 5.55 0.15 -0.15 +0 2.65 .25 -0.1 + 0.1 5 0 .5 0 -0.15 +0 1.50 .28 -0.1 + 9.70 0.2 -0.2 0.80+0.1 -0.1 0.127 m ax D G S 2.3 4 .60 +0.15 -0.15 0.60+ 0.1 - 0.1 1 Gate 2 Drain 3 Source 4 Drain Ƶ Absolute Maximum Ratings Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current, VGS @ -10V Pulsed Drain Current *1 Single Pulse Avalanche Energy *2 Avalanche Current *1 Repetitive Avalanche Energy *1 Peak Diode Recovery dv/dt *3 TC = 25 °C TC = 100 °C ID IDM EAS IAR EAR dv/dt Power Dissipation Thermal Resistance.