EVVOSEMI IRLML0060
60V N-Channel MOSFET
| Part No. | IRLML0060 |
|---|---|
| Datasheet | IRLML0060 Download |
| Manufacturer |  EVVOSEMI |
| Description | 60V N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Industry-standard pinout● Compatible with existing Surface Mount Techniques
● compliant containing no lead, no bromide and no halogen
● Industrial qualification
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter VDS Drain-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 10V ID @ TA = 70°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current PD @TA = 25°C Maximum Power Dissipation PD @TA = 70°C Maximum Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage TJ, TSTG Junction and Storage Temperature Range Thermal Resistance Symbol R●JA R●JA Parameter e Junction-to-Ambient f Junction-to-Ambient (t<10s) 1. GATE 2. SOURCE 3. DRAIN * ' 6 SOT23 Max. 60 2.7 2.1 11 1.25 0.80 0.01 ± 16 -55 to + 150 Typ. ––– ––– Max. 100 99 Units V A W W/°C V °C Units °C/W 1 IRLML0060 N-Channel 60 V (D-S) MOSFET Electric Characteristics @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 60 ––– ––– V VGS = 0V, ID = 250μA V(BR)DSS/TJ Breakdown Voltage Temp.
