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IRLML0060 - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 60V.
  • RDS(ON) ＜ 92mΩ (VGS = 10V).
  • RDS(ON) ＜ 116mΩ (VGS = 4.5V) TraMnOsiSsFtoErsT N-Channel MOSFET IRLML0060 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 Unit: mm +0.11.3 -0.1 0.55 0.4 +0.12.4 -0.1 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 0.1 +0.05 -0.01 +0.10.97 -0.1 1. Gate 2. Source 3. Drain 0-0.1 +0.10.38 -0.1.
  • Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current Pulsed Drain Current Power Dissipation.

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SMD Type ■ Features ● VDS (V) = 60V ● RDS(ON) ＜ 92mΩ (VGS = 10V) ● RDS(ON) ＜ 116mΩ (VGS = 4.5V) TraMnOsiSsFtoErsT N-Channel MOSFET IRLML0060 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 Unit: mm +0.11.3 -0.1 0.55 0.4 +0.12.4 -0.1 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 0.1 +0.05 -0.01 +0.10.97 -0.1 1. Gate 2. Source 3. Drain 0-0.1 +0.10.38 -0.1 ■ Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current Pulsed Drain Current Power Dissipation Thermal Resistance. Junction- to-Ambient *1 Thermal Resistance. Junction- to-Ambient (t<10s) Junction Temperature Storage Temperature Range *1: Surface mounted on 1 in square Cu board. TA=25℃ TA=70℃ TA=25℃ TA=70℃ Symbol VDS VGS ID IDM PD RthJA TJ Tstg Rating 60 ±16 2.7 2.1 11 1.25 0.