EVVOSEMI MMBTA05
SOT-23 Plastic-Encapsulate Transistors
FEATURES
Driver transistor MARKING :1HMAXIMUM RATINGS
(Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 60 60 4 0.5 300 150 -55-150 Unit V V V A mW ℃ ℃ 1. BASE 2. EMITTER 3. COLLECTORELECTRICAL CHARACTERISTICS
(Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Collector cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Symbol Test conditions V(BR)CBO IC= 100μA, IE=0 V(BR)CEO IC= 1mA, IB=0 V(BR)EBO IE=100μA, IC=0 ICBO VCB=60V, IE=0 ICEO VCE=60V, IB=0 IEBO VEB=3V, IC=0 hFE1 VCE=1V, IC= 10mA hFE2 VCE=1V, IC= 100mA VCE(sat) IC=100mA, IB=10mA VBE VCE=1V, IC= 100mA VCE= 2V, IC=10mA fT f...