MMBTA05 - NPN General Purpose Transistor

Galaxy Microelectronics

Key Features

High breakdown voltage.
Complementary PNP type available Pb Lead-free (MMBTA55/MMBTA56).
Low collector-emitter saturation voltage.

MMBTA05 npn general purpose transistor by Galaxy Microelectronics - Datasheet Preview

Datasheet Details

Part number	MMBTA05
Manufacturer	Galaxy Microelectronics
File Size	393.21 KB
Description	NPN General Purpose Transistor
Datasheet	MMBTA05 Datasheet

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Production specification NPN General Purpose Transistor FEATURES  High breakdown voltage.  Complementary PNP type available Pb Lead-free (MMBTA55/MMBTA56).  Low collector-emitter saturation voltage. APPLICATIONS  Ideal for medium power amplification and switching. ORDERING INFORMATION Type No. Marking MMBTA05 MMBTA06 1H 1GM MMBTA05/MMBTA06 SOT-23 Package Code SOT-23 SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VCBO VCEO collector-base voltage collector-emitter voltage MMBTA05 MMBTA06 MMBTA05 MMBTA06 VEBO emitter-base voltage IC collector current (DC) PC Collector dissipation RθJA Thermal Resistance, Junction to Ambient Tj ,Tstg junction and storage temperature Value 60 80 60 80 4 0.