EVVOSEMI MMBTA56
PNP Transistors
| Part No. | MMBTA56 |
|---|---|
| Datasheet | MMBTA56 Download |
| Manufacturer |  EVVOSEMI |
| Description | PNP Transistors |
| Buy | Stock & Price |
FEATURES
● Collector Current Capability IC=-0.5A● Collector Emitter Voltage VCEO=-80V 3 2 1.Base 2.Emitter 1 3.Collector
● Simplified outline(SOT-23)
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ABSOLUTE MAXIMUM RATINGS
Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Power Dissipation Derate Above 25°C Thermal Resistance Junction−to−Ambient Junction Temperature Storage Temperature range Symbol VCBO VCEO VEBO IC PC RθJA TJ Tstg Rating -80 -80 -4 -0.5 225 1.8 556 150 -55 to 150 Unit V A mW mW/℃ ℃/W ℃●
ELECTRICAL CHARACTERISTICS
Ta = 25℃ Parameter Collector- base breakdown voltage Collector- emitter breakdown voltage Emitter - base breakdown voltage Collector-base cut-off current Collectorr cut-off current Emitter cut-off current Collector-emitter saturation voltage Base - emitter saturation voltage Base - emitter on voltage DC current gain Transition frequency Symbol Test Conditions VCBO Ic= -100 μA， IE=0 VCEO Ic= -1 mA， IB=0 VEBO IE= -100μA...
