EVVOSEMI MMBTA92
PNP TRANSISTOR
| Part No. | MMBTA92 |
|---|---|
| Datasheet | MMBTA92 Download |
| Manufacturer |  EVVOSEMI |
| Description | PNP TRANSISTOR |
| Buy | Stock & Price |
FEATURES
● High Voltage Transistor SOT-23 3MAXIMUM RATINGS
(Ta=25℃ unless other wise noted) Parameter Symbol Value Collector–Base Voltage VCBO -300 Collector–Emitter Voltage VCEO -300 Emitter–Base Voltage VEBO -5 Collector Current — Continuous IC -200 Collector Current -Pulsed ICM -500 Collector Power Dissipation PC 300 Junction Temperature TJ 150 Storage Temperature Tstg -55~+150 Thermal Resistance, Junction to Ambient RthJA 410 Unit V V V mA mA mW ℃ ℃ ℃/W 1 2 1.BASE 2.EMITTER 3.COLLECTORELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted.) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Symbol Test conditions V(BR)CBO IC =-100uA, IE = 0 V(BR)CEO IC =-1mA, IB = 0 V(BR)EBO ICBO IE =-100uA, IC = 0 VCB =-200V, IE = 0 Min Max Unit -300 V -300 V -5 V -0.25 uA Emitter cut-off current IEBO hFE(1) VEB =-5V, IC =0 VCE =-10V, IC =-1mA -0.1 uA 60 DC current gain hFE(2) VCE =-10V, IC =-10mA 100 200...
