EVVOSEMI MMBTH10
NPN Transistors
| Part No. | MMBTH10 |
|---|---|
| Datasheet | MMBTH10 Download |
| Manufacturer |  EVVOSEMI |
| Description | NPN Transistors |
| Buy | Stock & Price |
FEATURES
●Collector Current Capability IC=0.05 A●Collector Emitter Voltage VCEO=25V
● Classification of hfe Marking 3EM 3 2 1.Base 2.Emitter 1 3.Collector
● Simplified outline(SOT-23)
●
ABSOLUTE MAXIMUM RATINGS
Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Power Dissipation Thermal Resistance Junction to Ambient Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC PC RθJA TJ Tstg Rating 30 25 3 0.05 225 556 150 -55 to +150 Unit V A mW ℃/W ℃●
ELECTRICAL CHARACTERISTICS
Ta = 25℃ Parameter Collector- base breakdown voltage Collector- emitter breakdown voltage Emitter - base breakdown voltage Collector-base cut-off current Emitter cut-off current Collector-emitter saturation voltage Base - emitter saturation voltage Base - emitter saturation voltage DC current gain Collector output capacitance Transition frequency Symbol VCBO VCEO VEBO ICBO IEBO VCE(sat) VBE(sat) VBE hFE Cob fT Te...
