MMBTH10 - Silicon Epitaxial Planar Transistor

Galaxy Microelectronics

Key Features

z High transition frequency. z Power dissipation. (PC=350mW). Pb Lead-free.

MMBTH10 silicon epitaxial planar transistor by Galaxy Microelectronics - Datasheet Preview

Datasheet Details

Part number	MMBTH10
Manufacturer	Galaxy Microelectronics
File Size	187.12 KB
Description	Silicon Epitaxial Planar Transistor
Datasheet	MMBTH10 Datasheet

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Silicon Epitaxial Planar Transistor FEATURES z High transition frequency. z Power dissipation.(PC=350mW). Pb Lead-free APPLICATIONS z VHF/UHF Transistor. Production specification MMBTH10 ORDERING INFORMATION Type No. Marking MMBTH10 3EM SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 30 VCEO Collector-Emitter Voltage 25 VEBO Emitter-Base Voltage 3 IC Collector Current -Continuous 50 PC Collector Dissipation 350 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V mA mW ℃ C125 Rev.A www.gmicroelec.