Galaxy Century Microelectronics MMBTH10
Silicon Epitaxial Planar Transistor
| Part No. | MMBTH10 |
|---|---|
| Datasheet | MMBTH10 Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | Silicon Epitaxial Planar Transistor |
| Buy | Stock & Price |
FEATURES
● High transition frequency.● Power dissipation. (PC=350mW)
APPLICATIONS
● VHF/UHF Transistor Product Specification MMBTH10 ORDERING INFORMATION Type No. Marking MMBTH10 3EM SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 30 VCEO Collector-Emitter Voltage 25 VEBO Emitter-Base Voltage 3 IC Collector Current -Continuous 50 PC Collector Dissipation 350 TJ, TSTG Junction and Storage Temperature -55 to +150 Units V V V mA mW ℃ STM0026A 1 Product Specification Silicon Epitaxial Planar Transistor MMBTH10ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN MAX Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 30 Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 25 Emitter-base breakdown voltage V(BR)EBO IE=10μA,IC=0 3 Collector cut-off current Emitter cut-off current DC current gain ICBO VCB=25V,IE=0 IEBO VEB=2V,IC=0 hFE VCE=10V,IC=4.0mA 0.1 0.
