Weitron Technology MMBTH10
NPN Silicon VHF/UHF Transistor
| Part No. | MMBTH10 |
|---|---|
| Datasheet | MMBTH10 Download |
| Manufacturer |  Weitron Technology |
| Description | NPN Silicon VHF/UHF Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
(Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Symbol VCEO VCBO VEBO IC Value 25 30 3.0 50 Unit Vdc Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristics Total Device Dissipation FR-5 Board(1) TA =25 C Derate above 25 C Thermal Resistance, Junction Ambient Junction and Storage, Temperature Symbol PD R θJA TJ, Tstg V alue 225 1.8 556 -55 to +150 Unit mW mW/ C C/W C Device Marking MMBTH10=3EMELECTRICAL CHARACTERISTICS
Characteristics Collector-Emitter Breakdown Voltage (IC= 1.0 mAdc, I B =0) Collector-Base Breakdown Voltage (IC= 100 uAdc, I E =0) Emitter-Base Breakdown Voltage (IE= 10 uAdc, I C=0) Collector Cutoff Current (VCB= 25Vdc, I E=0) Emitter Cutoff Current (VEB= 2.0 V dc, I C =0) 1. FR-5=1.0 I I 0.75 I I 0.062 in Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Min 25 30 3.0 Max 100 100 Unit Vdc Vdc Vdc nAdc nAdc WEITRON 1/5 29-Aug-05 MMBTH10ELECTRICAL CHARACTERISTICS
(TA =25 C unless otherwise not...
