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MMBTH10
NPN Silicon VHF/UHF Transistor
P b Lead(Pb)-Free
BASE COLLECTOR
3 1 2
SOT-23
EMITTER
MAXIMUM RATINGS (Ta=25 C)
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
Collector Current - Continuous
Symbol VCEO VCBO VEBO IC
Value 25 30 3.0
50
Unit Vdc Vdc Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristics Total Device Dissipation FR-5 Board(1) TA =25 C Derate above 25 C Thermal Resistance, Junction Ambient Junction and Storage, Temperature Symbol PD R θJA TJ, Tstg V alue 225 1.8 556 -55 to +150 Unit mW mW/ C C/W C
Device Marking
MMBTH10=3EM
ELECTRICAL CHARACTERISTICS
Characteristics Collector-Emitter Breakdown Voltage (IC= 1.