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MMBTH10 - SMD VHF/UHF Transistor

Description

MMBTH10 VCBO VCEO VEBO Marking Code Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage 3E 30 25 3.0 Ptot RθJA Ptot RθJA TJ,TSTG Power Dissipation FR-5 Board, Ta=25°C Derate above 25°C Thermal Resistance from Junction to Ambient in Free Air Power

Features

  • NPN Silicon Epitaxial Planar Transistor.
  • RoHS compliance Mechanical Data Case: Terminals: Weight: SOT-23, Plastic Package Solderable per MIL-STD-202G, Method 208 0.008 gram SOT-23 Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol.

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Datasheet Details

Part number MMBTH10
Manufacturer TAITRON
File Size 151.71 KB
Description SMD VHF/UHF Transistor
Datasheet download datasheet MMBTH10 Datasheet
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Full PDF Text Transcription

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SMD VHF/UHF Transistor (NPN) MMBTH10 SMD VHF/UHF Transistor (NPN) Features • NPN Silicon Epitaxial Planar Transistor • RoHS compliance Mechanical Data Case: Terminals: Weight: SOT-23, Plastic Package Solderable per MIL-STD-202G, Method 208 0.008 gram SOT-23 Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description MMBTH10 VCBO VCEO VEBO Marking Code Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage 3E 30 25 3.0 *Ptot *RθJA **Ptot **RθJA TJ,TSTG Power Dissipation FR-5 Board, Ta=25°C Derate above 25°C Thermal Resistance from Junction to Ambient in Free Air Power Dissipation Alumina Substrate, Ta=25°C Derate above 25°C Thermal Resistance from Junction to Ambient in Free Air Junction and Storage Temperature Range 225 1.8 556 300 2.
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