Semtech Corporation MMBTH10
NPN Silicon VHF/UHF Transistor
ABSOLUTE MAXIMUM RATINGS
(Ta = 25 OC) Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Total Device Dissipation FR-5 Board1) Derate above 25 OC Thermal Resistance Junction to Ambient Junction and Storage Temperature 1) FR-5 = 1 X 0.75 X 0.062 in. Symbol VCBO VCEO VEBO Ptot RθJA TJ,Tstg Value 30 25 3 200 1.8 417 -55 to +150 Unit V V V mW mW / OC OC/W OC SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated : 20/10/2005 MMBTH10 Characteristics at Tamb=25 OC DC Current Gain at VCE=10V, IC=4mA Collector Emitter Saturation Voltage at IC=4mA, IB=0.4mA Base Emitter On Voltage at IC=4mA, VCE=10V Collector Cutoff Current at VCB=25V Emitter Cutoff Current at VEB=2V Collector Base Breakdown Voltage at IC=100µA Collector Emitter Breakdown Voltage at IC=1mA Emitter Base Breakdown Voltage at IE=10µA Current Gain Bandwidth Product at VCE=10V, IC=4mA, f=100MHz Collector-Base Ca