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ECX10P20
P CHANNEL LATERAL MOSFET
P Channel Lateral Mosfet Designed speci cally for linear audio ampli er applications High-speed for high bandwidth ampli ers Reduced Vds sat High voltage rating - 200V TO-247 plastic package Enhanced oscillation suppression in multi-device applications Complementary N-channel available – ECX10N20
ABSOLUTE MAXIMUM RATINGS
(TC= 25°C unless otherwise stated)
VDSS
Drain – Source Voltage
-200V
VGSS
Gate – Source Voltage
+/-14V
ID
Continuous Drain Current
-8A
I DR
Body Drain Diode Current
-8A
PD
Allowable Power Dissipation* Tcase = 25°C
Tch
Channel Temperature
125W 150°C
T stg
Storage Temperature Range
-55 to +150°C
*Thermal Resistance, Junction To Case
1.0°C/W
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ECX10P20 Datasheet
