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ES3907 - P-channel MOSFET

General Description

The ES3907 is P-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Device is suitable for use in DC-DC conversion, power switch and charging circuit.

Key Features

  • -60V, RDS(ON)=19mΩ(Typ), VGS=-10V RDS(ON)=23mΩ(Typ), VGS=-4.5V.
  • Fast Switching.
  • High density cell design for low RDS(on).
  • Material: Halogen free.
  • Reliable and rugged.
  • Avalanche Rated.
  • Low leakage current 3.

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Datasheet Details

Part number ES3907
Manufacturer ElecSuper
File Size 902.53 KB
Description P-channel MOSFET
Datasheet download datasheet ES3907 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ES3907 Rev-1.1 www.elecsuper.com SuperMOS - SOP8 -60V BVDSS,19mΩ RDS(on), -9.4A ID P-channel MOSFET 1. Description The ES3907 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. Device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product ES3907 is Pb-free. 2. Features ⚫ -60V, RDS(ON)=19mΩ(Typ), VGS=-10V RDS(ON)=23mΩ(Typ), VGS=-4.5V ⚫ Fast Switching ⚫ High density cell design for low RDS(on) ⚫ Material: Halogen free ⚫ Reliable and rugged ⚫ Avalanche Rated ⚫ Low leakage current 3. Applications ⚫ PWM applications ⚫ Load switch ⚫ Power management in portable/desktop PCs ⚫ DC/DC conversion 100% UIS TESTED! 4.