ES3907 Overview
Description
The ES3907 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
Key Features
- 60V, RDS(ON)=19mΩ(Typ), VGS=-10V RDS(ON)=23mΩ(Typ), VGS=-4.5V
- Fast Switching
- High density cell design for low RDS(on)
- Material: Halogen free
- Reliable and rugged
